DocumentCode
1253843
Title
A novel flip-chip interconnection technique using solder bumps for high-speed photoreceivers
Author
Katsura, Kohsuke ; Hayashi, Tsuyoshi ; Ohira, Fumikazu ; Hata, Susumu ; Iwashita, Katushi
Author_Institution
NTT Appl. Electron. Lab., Tokyo, Japan
Volume
8
Issue
9
fYear
1990
fDate
9/1/1990 12:00:00 AM
Firstpage
1323
Lastpage
1327
Abstract
A flip-chip interconnection technique using small solder bumps instead of conventional wire bonding for high-speed broadband photoreceivers is described. The technique achieves interconnection with low parasitic elements, no damage to devices, and easy assembly. A photoreceiver composed of a broadband p-i-n photodiode and a laser-speed GaAS metal-semiconductor field-effect transistor (MESFET) preamplifier connected using solder bumps that are about 26 μm in diameter, with a frequency response of over 22 GHz at 1.55 μm, is demonstrated. This confirms the effectiveness of the solder bump interconnection technique for future high-speed broadband optical modules
Keywords
integrated optoelectronics; optical communication equipment; photodiodes; semiconductor technology; soldering; broadband p-i-n photodiode; flip-chip interconnection technique; frequency response; high speed GaAs metal semiconductor field effect transistor; high-speed broadband photoreceivers; parasitic elements; solder bump interconnection technique; Assembly; Bonding; FETs; Frequency response; Gallium arsenide; High speed optical techniques; MESFETs; PIN photodiodes; Preamplifiers; Wire;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.59160
Filename
59160
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