• DocumentCode
    1253916
  • Title

    Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates

  • Author

    Ohki, Akira ; Ohno, Tetsufumi ; Matsuoka, T. ; Ichimura, Yuta

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa
  • Volume
    33
  • Issue
    11
  • fYear
    1997
  • fDate
    5/22/1997 12:00:00 AM
  • Firstpage
    990
  • Lastpage
    991
  • Abstract
    Room temperature continuous-wave (CW) operation of a ZnSe based blue-green laser diode, homoepitaxially grown on semi-insulating ZnSe substrates, has been achieved. The threshold current and operation voltage under a CW electrical bias were 84 mA and 15 V, respectively. Under a pulsed electrical bias, lasing was achieved at up to 348 K. The characteristic temperature (T0) was 140 K between 253 and 318 K
  • Keywords
    II-VI semiconductors; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; zinc compounds; 15 V; 253 to 348 K; 84 mA; CW electrical bias; VPE; ZnSe; blue-green laser diode; characteristic temperature; continuous-wave operation; homoepitaxial growth; operation voltage; pulsed electrical bias; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970624
  • Filename
    591609
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1253916