Title :
Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates
Author :
Ohki, Akira ; Ohno, Tetsufumi ; Matsuoka, T. ; Ichimura, Yuta
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
fDate :
5/22/1997 12:00:00 AM
Abstract :
Room temperature continuous-wave (CW) operation of a ZnSe based blue-green laser diode, homoepitaxially grown on semi-insulating ZnSe substrates, has been achieved. The threshold current and operation voltage under a CW electrical bias were 84 mA and 15 V, respectively. Under a pulsed electrical bias, lasing was achieved at up to 348 K. The characteristic temperature (T0) was 140 K between 253 and 318 K
Keywords :
II-VI semiconductors; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; zinc compounds; 15 V; 253 to 348 K; 84 mA; CW electrical bias; VPE; ZnSe; blue-green laser diode; characteristic temperature; continuous-wave operation; homoepitaxial growth; operation voltage; pulsed electrical bias; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970624
