• DocumentCode
    1253923
  • Title

    Low-noise current optoelectronic integrated receiver with internal equalizer for gigabit-per-second long-wavelength optical communications

  • Author

    Yano, Hiroshi ; Aga, Keigo ; Kamei, Hidenori ; Sasaki, Goro ; Hayashi, Hideki

  • Author_Institution
    Sumitomo Electr. Ind. Ltd., Yokohama, Japan
  • Volume
    8
  • Issue
    9
  • fYear
    1990
  • fDate
    9/1/1990 12:00:00 AM
  • Firstpage
    1328
  • Lastpage
    1333
  • Abstract
    An equalizer, which is essential in order to improve the sensitivity of receiver optoelectronic integrated circuits (OEICs) at a gigabit-per-second data rate, has been monolithically integrated on an InP substrate with a p-i-n photodiode and a high-impedance high-electron-mobility-transistor (HEMT) amplifier. The receiver operated up to 1.6 Gb/s and showed low noise current characteristics. The minimum noise current is less than 4 pA/√Hz. The sensitivity calculated from the noise current characteristics is -28.4 dBm for 1.6-Gb/s signals. The receiver chip, which was assembled on a ceramic mount, exhibited a sensitivity of -30.4 dBm at 1.2 Gb/s and 1.3-μm wavelength. The performance is as good as those of receiver OEICs with an external equalizer and sufficient for practical use in gigabit-per-second optical communication system
  • Keywords
    amplifiers; equalisers; field effect integrated circuits; high electron mobility transistors; integrated optoelectronics; optical communication equipment; p-i-n diodes; photodiodes; receivers; 1.2 Gbit/s; 1.3 micron; 1.6 Gbit/s; HEMT amplifier; InP substrate; ceramic mount; gigabit-per-second data rate; high electron mobility transistor amplifier; internal equalizer; long-wavelength optical communications; noise current characteristics; p-i-n photodiode; receiver OEICs; receiver optoelectronic integrated circuits; sensitivity; wavelength; Assembly; Ceramics; Equalizers; HEMTs; Indium phosphide; Integrated circuit noise; Monolithic integrated circuits; Optical amplifiers; Optical receivers; PIN photodiodes;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/50.59161
  • Filename
    59161