Title :
Improvement of fT by dipole doping at the collector heterojunction in InP double HBTs
Author :
McAlister, S.P. ; McKinnon, W.R. ; Driad, Rachid
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont.
fDate :
5/22/1997 12:00:00 AM
Abstract :
The authors show clearly how dipole doping at the collector heterojunction in an InP/lnGaAs double heterojunction bipolar transistor improves device performance. Specifically, both fT and fmax are increased and the DC current-blocking is reduced. Also the DC switching characteristics, seen in devices with abrupt undoped InGaAs/InP collector heterojunctions, can almost be eliminated by using the dipole doping at that interface
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; DC current-blocking; DC switching characteristics; InP-InGaAs; collector heterojunction; device performance; dipole doping; double HBTs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970644
