Title :
The development of repairable Au-Al solid phase diffusion flip-chip bonding
Author :
Iida, Atsuko ; Kizaki, Yukio ; Fukuda, Yumi ; Mori, Miki
Author_Institution :
Mater. & Dev. Res. Labs., Toshiba Corp., Yokohama, Japan
fDate :
10/1/1997 12:00:00 AM
Abstract :
The authors have developed a new repairable chip-on-glass (COG) bonding technique for liquid crystal display (LCD) panels. Gold (Au) bumps on an LSI chip were bonded directly to aluminum (Al) electrodes on a glass substrate by formation of Al-Au intermetallic compounds in the diffusion layer. The developed repairable bonding technique consists a of two-level bonding process. First, the chip was bonded at 250°C. Partial interconnection could be obtained at the local contact portions between the Au bump and the Al electrode. If the electrical connection failed, the bonded chip was removed. There was a distribution of the area formed Al-Au intermetallic compounds at local contact portions for 250°C bonding. Some areas formed Al-Au intermetallic compounds of the Al electrode were sometimes removed with the chip removal, and an underlying metal layer was locally exposed at the remained surface. Then, a new chip was bonded on the same Al electrodes under the same conditions at 250°C. After obtaining the electrical connection, the second bonding was done at 350°C. An AlAu4 intermetallic formation was obtained by this bonding in the diffusion layer. Reliability tests of second bonded samples were carried out and the contact resistance between the Au bumps and the Al electrodes was measured by the four-probe resistance measurement. In the case that the exposed area ratio of the underlying metal layer was less than 30% of bonding area for each Al electrode, the stable electrical connection has been kept for a high temperature storage test and a thermal shock test. It was confirmed that a stable electrical connection had been obtained by the proposed repairable bonding process
Keywords :
aluminium alloys; chemical interdiffusion; contact resistance; flip-chip devices; gold alloys; liquid crystal displays; maintenance engineering; 250 C; Au-Al; KGD; LSI chip; TEM; aluminum electrode; chip-on-glass bonding; contact resistance; electrical connection; glass substrate; gold bump; high temperature storage; intermetallic compound formation; liquid crystal display panel; reliability; repairable Au-Al solid phase diffusion flip-chip bonding; thermal shock; Bonding processes; Contacts; Diffusion bonding; Electrical resistance measurement; Electrodes; Gold; Intermetallic; Liquid crystal displays; Solids; Testing;
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part C, IEEE Transactions on
DOI :
10.1109/3476.650967