Extremely low threshold current operation in 1.5-μm MQW-DFB laser diodes with semi-insulating InP current blocking region

Author

Sasaki, Tatsuya ; Yamazaki, Hiroyuki ; Henmi, Naoya ; Yamada, Hirohito ; Yamaguchi, Masayuki ; Kitamura, Mitsuhiro ; Mito, Ikuo

Author_Institution

NEC Corp., Kanagawa, Japan

Volume

8

Issue

9

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

1343

Lastpage

1349

Abstract

Threshold current operation of 1.5 mA was achieved for 1.5-μm multiple-quantum-well distributed feedback (MQW-DFB) laser diodes (LDs) with semi-insulating current blocking layers entirely grown by metalorganic vapor phase epitaxy (MOVPE). Such low-threshold current is attained by reducing leakage current and mirror loss in the laser structure. The required bias current for achieving several gigahertz bandwidth is markedly reduced due to the enhanced differential gain and low threshold current. Due to the reduced lasing delay time in such low threshold LDs, up to 5-GHz zero-bias current modulation, with a clear eye opening, is successfully demonstrated

Keywords

III-V semiconductors; distributed feedback lasers; indium compounds; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.5 mA; 1.5 micron; III-V semiconductors; InP:Fe; bias current; differential gain; laser structure; lasing delay time; leakage current; metalorganic vapor phase epitaxy; mirror loss; multiple quantum well distributed feedback laser diodes; semi-insulating current blocking layers; threshold current operation; Bandwidth; Diode lasers; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Laser feedback; Leakage current; Mirrors; Quantum well devices; Threshold current;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.59163

Filename

59163