• DocumentCode
    1253979
  • Title

    Spatio-temporal modeling of the optical properties of VCSELs in the presence of polarization effects

  • Author

    Mulet, Josep ; Balle, Salvador

  • Author_Institution
    Instituto Mediterraneo de Estudios Avanzados, Univ. de les Illes Baleares, Palma de Mallorca, Spain
  • Volume
    38
  • Issue
    3
  • fYear
    2002
  • fDate
    3/1/2002 12:00:00 AM
  • Firstpage
    291
  • Lastpage
    305
  • Abstract
    We develop an optical dynamical model for vertical-cavity surface-emitting lasers (VCSELs) which describes, in an unified way, polarization and spatial effects. The model is based on equations for the lateral dependence of the slowly-varying amplitudes of the optical field in both circular polarizations, and equations for the carrier density in both spin orientations. This provides a natural generalization of the spin flip model for the description of polarization properties of VCSELs extensively used in the literature. In its present form, the model assumes given functional dependence of the guiding mechanisms (built-in refractive index and thermal lensing) as well as the spatial dependence of the current density. We investigate the transverse mode behavior of gain-guided, bottom and top-emitter VCSELs by implementing the model with an analytical approximation to the susceptibility of quantum-well semiconductors. We demonstrate that the stronger the thermal lens, the stronger the tendency toward multimode operation, which indicates that high lateral uniformity of the temperature is required in order to maintain single mode operation in gain-guided VCSELs. We perform analytical calculations of the threshold curves in both types of VCSELs. Also, close-to-threshold numerical simulations show that, depending on the current shape, thermal lensing strength and relative detuning, different transverse modes can be selected
  • Keywords
    carrier density; laser theory; refractive index; semiconductor device models; semiconductor lasers; surface emitting lasers; thermal blooming; waveguide lasers; VCSELs; bottom-emitter VCSELs; built-in refractive index; carrier density; circular polarizations; current shape; functional dependence; guiding mechanisms; high lateral uniformity; lateral dependence; multimode operation; optical dynamical model; optical field; optical properties; polarization effects; quantum-well semiconductors; relative detuning; slowly-varying amplitudes; spatial dependence; spatial effects; spatio-temporal modeling; spin flip model; spin orientations; thermal lensing; thermal lensing strength; threshold curves; top-emitter VCSELs; transverse mode behavior; transverse modes; vertical-cavity surface-emitting lasers; Charge carrier density; Equations; Laser modes; Optical polarization; Optical refraction; Optical variables control; Refractive index; Surface emitting lasers; Thermal lensing; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.985571
  • Filename
    985571