Title :
Recent progress in high-power GaInAsP lasers
Author :
Oshiba, Saeko ; Tamura, Yasuaki
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fDate :
9/1/1990 12:00:00 AM
Abstract :
The high-power characteristics (180 mW, CW) and reliability of 1.48-μm Fabry-Perot laser diodes are studied for V-grooved inner stripe lasers grown by liquid phase epitaxy on p-type substrate (VIPS lasers). Their potential as pumping sources of erbium-doped fiber amplifiers is reported, and their power saturation behavior at several wavelengths is discussed. Aging tests were conducted at high power levels of up to 75% CW maximum power (Pmax) at -40, 25, and 70°C. The ageing power reached more than 200 mW at -40°C; however, no significant degradation was observed at any temperature level. At 25°C the median lifetime is estimated to be 60000 h, and stable operation is observed at the highest aging level (to date) of 200 mW for up to 1600 h at -40°C
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical pumping; semiconductor junction lasers; -40 degC; 1.48 micron; 180 mW; 25 degC; 70 degC; CW light output power; Er doped fiber amplifiers; Fabry-Perot laser diodes; GaInAsP lasers; III-V semiconductors; V-grooved inner stripe lasers; ageing power; high-power characteristics; liquid phase epitaxy; median lifetime; p-type substrate; power saturation behavior; pumping sources; stable operation; temperature level; wavelengths; Aging; Degradation; Diode lasers; Epitaxial growth; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Fabry-Perot; Pump lasers; Substrates; Testing;
Journal_Title :
Lightwave Technology, Journal of
