Best combination between power density, efficiency, and gain at V-band with an InP-based PHEMT structure

Author

Piotrowicz, S. ; Gaquiere, C. ; Bonte, B. ; Bourcier, E. ; Theron, D. ; Wallart, X. ; Crosnier, Y.

Author_Institution

Inst. d´´Electronique et de Microelectronique du Nord, Villeneuve, France

Volume

8

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

10

Lastpage

12

Abstract

In this work we report on the state-of-the-art combination at V-band between simultaneously power density (370 mW/mm), power-added efficiency (28.3%), and power gain (5.2 dB) of InP pseudomorphic HEMTs biased at a low drain voltage of 2 V. The performance of these double delta-doped pseudomorphic AlInAs-GaInAs HEMTs on InP with an original strain compensated channel was measured at 60 GHz. This demonstrates a good potentiality for low-voltage applications in order to reduce the power supply of systems

Keywords

III-V semiconductors; aluminium compounds; current density; doping profiles; gallium arsenide; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; power field effect transistors; 2 V; 28.3 percent; 5.2 dB; 60 GHz; AlInAs-GaInAs HEMT; AlInAs-GaInAs-InP; EHF; InP; InP-based PHEMT structure; MM-wave FET; V-band; double delta-doped channel; low drain voltage biasing; low-voltage applications; power density; power gain; power-added efficiency; pseudomorphic HEMT; strain compensated channel; Density measurement; Gain measurement; HEMTs; Indium phosphide; Low voltage; MODFETs; PHEMTs; Performance gain; Power measurement; Strain measurement;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.650972

Filename

650972