Title :
Electromagnetic analysis for microwave FET modeling
Author :
Larique, E. ; Mons, S. ; Baillargeat, D. ; Verdeyme, S. ; Aubourg, M. ; Guillon, P. ; Quere, R.
Author_Institution :
IRCOM, Limoges Univ., France
fDate :
1/1/1998 12:00:00 AM
Abstract :
This letter presents a technique to analyze complex microwave devices. An electromagnetic three-dimensional (3-D) software is applied to characterize the distributed part of the structure. It is coupled to a circuit simulator to introduce the contribution on the electrical response of the localized passive or active elements contained in the device. The link between the two parts is made thanks to a new type of access, “the localized access”. We have applied this method to the study of a field effect transistor and good agreements are observed between simulations and measurements from 1 to 30 GHz
Keywords :
circuit analysis computing; field effect MMIC; finite element analysis; integrated circuit modelling; microwave field effect transistors; 1 to 30 GHz; 3D software; circuit simulator; electromagnetic analysis; finite element method; localized active elements; localized passive elements; microwave FET modeling; simulations; Circuit simulation; Coupling circuits; Electrodes; Electromagnetic analysis; Electromagnetic coupling; Electromagnetic measurements; Electromagnetic modeling; Microwave FETs; Microwave devices; Microwave theory and techniques;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
