DocumentCode :
1254160
Title :
Thin film SOI emerges
Author :
Alles, Michael L.
Author_Institution :
Ibis Technol. Corp., Danvers, MA, USA
Volume :
34
Issue :
6
fYear :
1997
fDate :
6/1/1997 12:00:00 AM
Firstpage :
37
Lastpage :
45
Abstract :
Everyone in a position to judge recognizes the advantages of silicon-on-insulator technology-higher circuit speed, lower power consumption, greater immunity to radiation-induced errors and compatibility with existing IC fabrication processes. In the past few years, these advantages have become critical for some commercial applications, particularly in the portable electronics arena, where the pressure for lower power and higher performance is unrelenting. As companies, universities, government agencies, and consortia throughout the world address silicon-on-insulator (SOI) technology, the supply of less expensive yet high-quality SOI materials is growing, and the grasp of the fabrication process strengthening-both encouraging signs. And, as applications for the technology increase, the focus today is shifting from issues oF feasibility to issues of circuit design and yield
Keywords :
integrated circuit design; integrated circuit technology; integrated circuit yield; silicon-on-insulator; IC fabrication processes; circuit design; circuit speed; circuit yield; fabrication process; high-quality SOI materials; portable electronics arena; power consumption; radiation-induced errors; silicon-on-insulator technology; thin film SOI; CMOS technology; Dielectrics and electrical insulation; Energy consumption; Fabrication; Phased arrays; Semiconductor thin films; Silicon on insulator technology; Thin film circuits; Very high speed integrated circuits; Voltage;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/6.591663
Filename :
591663
Link To Document :
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