DocumentCode
1254160
Title
Thin film SOI emerges
Author
Alles, Michael L.
Author_Institution
Ibis Technol. Corp., Danvers, MA, USA
Volume
34
Issue
6
fYear
1997
fDate
6/1/1997 12:00:00 AM
Firstpage
37
Lastpage
45
Abstract
Everyone in a position to judge recognizes the advantages of silicon-on-insulator technology-higher circuit speed, lower power consumption, greater immunity to radiation-induced errors and compatibility with existing IC fabrication processes. In the past few years, these advantages have become critical for some commercial applications, particularly in the portable electronics arena, where the pressure for lower power and higher performance is unrelenting. As companies, universities, government agencies, and consortia throughout the world address silicon-on-insulator (SOI) technology, the supply of less expensive yet high-quality SOI materials is growing, and the grasp of the fabrication process strengthening-both encouraging signs. And, as applications for the technology increase, the focus today is shifting from issues oF feasibility to issues of circuit design and yield
Keywords
integrated circuit design; integrated circuit technology; integrated circuit yield; silicon-on-insulator; IC fabrication processes; circuit design; circuit speed; circuit yield; fabrication process; high-quality SOI materials; portable electronics arena; power consumption; radiation-induced errors; silicon-on-insulator technology; thin film SOI; CMOS technology; Dielectrics and electrical insulation; Energy consumption; Fabrication; Phased arrays; Semiconductor thin films; Silicon on insulator technology; Thin film circuits; Very high speed integrated circuits; Voltage;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/6.591663
Filename
591663
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