• DocumentCode
    1254160
  • Title

    Thin film SOI emerges

  • Author

    Alles, Michael L.

  • Author_Institution
    Ibis Technol. Corp., Danvers, MA, USA
  • Volume
    34
  • Issue
    6
  • fYear
    1997
  • fDate
    6/1/1997 12:00:00 AM
  • Firstpage
    37
  • Lastpage
    45
  • Abstract
    Everyone in a position to judge recognizes the advantages of silicon-on-insulator technology-higher circuit speed, lower power consumption, greater immunity to radiation-induced errors and compatibility with existing IC fabrication processes. In the past few years, these advantages have become critical for some commercial applications, particularly in the portable electronics arena, where the pressure for lower power and higher performance is unrelenting. As companies, universities, government agencies, and consortia throughout the world address silicon-on-insulator (SOI) technology, the supply of less expensive yet high-quality SOI materials is growing, and the grasp of the fabrication process strengthening-both encouraging signs. And, as applications for the technology increase, the focus today is shifting from issues oF feasibility to issues of circuit design and yield
  • Keywords
    integrated circuit design; integrated circuit technology; integrated circuit yield; silicon-on-insulator; IC fabrication processes; circuit design; circuit speed; circuit yield; fabrication process; high-quality SOI materials; portable electronics arena; power consumption; radiation-induced errors; silicon-on-insulator technology; thin film SOI; CMOS technology; Dielectrics and electrical insulation; Energy consumption; Fabrication; Phased arrays; Semiconductor thin films; Silicon on insulator technology; Thin film circuits; Very high speed integrated circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/6.591663
  • Filename
    591663