DocumentCode
1254171
Title
Manufacturability issues in rapid thermal chemical vapor deposition
Author
Ozturk, M.C. ; Sorrell, F. Yates ; Wortman, Jimmie J. ; Johnson, F. Scott ; Grider, Douglas T.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume
4
Issue
2
fYear
1991
fDate
5/1/1991 12:00:00 AM
Firstpage
155
Lastpage
165
Abstract
Rapid thermal processing (RTP) has been considered from a manufacturing point of view as a potential technology for depositing thin films by low-pressure chemical vapor deposition (LPCVD) in a single-wafer manufacturing environment. The results of this study suggest that new chemical processes must be developed to satisfy the throughput requirements of single-wafer manufacturing and the demands of cold-wall reactor design. Issues such as temperature measurement and uniformity are reviewed and reconsidered in the context of LPCVD. New tool requirements for reduced pressure operation are discussed. New advances in tool design are needed (especially in temperature measurement) before rapid thermal chemical vapor deposition (RTCVD) can be considered as a routine manufacturable process
Keywords
chemical vapour deposition; integrated circuit manufacture; LPCVD; RTCVD; RTP; cold-wall reactor design; depositing thin films; low-pressure chemical vapor deposition; manufacturability issues; rapid thermal chemical vapor deposition; rapid thermal processing; reduced pressure operation; single-wafer manufacturing environment; temperature measurement; throughput requirements; tool requirements; Chemical processes; Chemical technology; Chemical vapor deposition; Fluid flow; Furnaces; Inductors; Manufacturing processes; Rapid thermal processing; Space technology; Sputtering; Temperature control; Temperature dependence; Temperature measurement; Throughput;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.79727
Filename
79727
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