Room temperature operation of GaInAs-GaInAsP-InP SCH multiquantum-film laser with narrow wire-like active region

Author

Miyake, Yasunari ; Hirayama, Hideki ; Arai, Shigehisa ; Miyamoto, Yasuyuki ; Suematsu, Yasuharu

Author_Institution

Dept. of Phys. Electron, Tokyo Inst. of Technol., Japan

Volume

3

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

191

Lastpage

192

Abstract

GaInAs-GaInAsP-InP SCH (separate-confinement heterostructure) multiquantum-film lasers with approximately 100-nm-wide wirelike active regions were fabricated by two-step low-pressure organometallic vapor-phase epitaxy (LP-OMVPE) growth and wet chemical etching and operated at room temperature. An increase in the threshold current density in such lasers was drastically reduced by using a preheating process in hydrogen atmosphere and a thin InP cover layer growth prior to the regrowth of a GaInAsP optical confinement layer. The fabrication processes presented can be very effective for realization of room-temperature operation of long-wavelength quantum-wire and quantum-box lasers based on GaInAs-InP materials.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaInAs-GaInAsP-InP; LP-OMVPE; SCH multiquantum-film laser; cover layer growth; narrow wire-like active region; optical confinement layer; preheating process; quantum-box lasers; quantum-wire lasers; room temperature; semiconductors; separate-confinement heterostructure; threshold current density; two-step low-pressure organometallic vapor-phase epitaxy; wet chemical etching; Atmosphere; Chemical lasers; Epitaxial growth; Hydrogen; Indium phosphide; Optical device fabrication; Optical materials; Temperature; Threshold current; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.79749

Filename

79749