Title :
Room temperature operation of GaInAs-GaInAsP-InP SCH multiquantum-film laser with narrow wire-like active region
Author :
Miyake, Yasunari ; Hirayama, Hideki ; Arai, Shigehisa ; Miyamoto, Yasuyuki ; Suematsu, Yasuharu
Author_Institution :
Dept. of Phys. Electron, Tokyo Inst. of Technol., Japan
fDate :
3/1/1991 12:00:00 AM
Abstract :
GaInAs-GaInAsP-InP SCH (separate-confinement heterostructure) multiquantum-film lasers with approximately 100-nm-wide wirelike active regions were fabricated by two-step low-pressure organometallic vapor-phase epitaxy (LP-OMVPE) growth and wet chemical etching and operated at room temperature. An increase in the threshold current density in such lasers was drastically reduced by using a preheating process in hydrogen atmosphere and a thin InP cover layer growth prior to the regrowth of a GaInAsP optical confinement layer. The fabrication processes presented can be very effective for realization of room-temperature operation of long-wavelength quantum-wire and quantum-box lasers based on GaInAs-InP materials.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaInAs-GaInAsP-InP; LP-OMVPE; SCH multiquantum-film laser; cover layer growth; narrow wire-like active region; optical confinement layer; preheating process; quantum-box lasers; quantum-wire lasers; room temperature; semiconductors; separate-confinement heterostructure; threshold current density; two-step low-pressure organometallic vapor-phase epitaxy; wet chemical etching; Atmosphere; Chemical lasers; Epitaxial growth; Hydrogen; Indium phosphide; Optical device fabrication; Optical materials; Temperature; Threshold current; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
