Title :
Anomalously high damping in strained InGaAs-GaAs single quantum well lasers
Author :
Sharfin, W.F. ; Schlafer, J. ; Rideout, W. ; Elman, B. ; Lauer, R.B. ; LaCourse, J. ; Crawford, F.D.
Author_Institution :
GTE Lab. Inc., Waltham, MA, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
Measurements of the relative intensity noise spectra of strained, single-quantum-well, separate-confinement-heterostructure (SCH) InGaAs-GaAs lasers indicate that their frequency response is strongly damped. The ratio of the damping rate to the square of the resonance frequency is k=2.4 ns. This intrinsically limits the 3-dB modulation bandwidths of these lasers to about 4 GHz, negating the predicted increase in modulation bandwidth due to the large differential gain often associated with quantum-well devices. The damping behavior of these lasers is inconsistent with previous predictions of damping in bulk lasers due to spectral hole burning. A structure-dependent damping mechanism is proposed for quantum-well lasers.<>
Keywords :
III-V semiconductors; damping; gallium arsenide; indium compounds; semiconductor junction lasers; 4 GHz; InGaAs-GaAs; damping rate; differential gain; frequency response; modulation bandwidths; relative intensity noise spectra; resonance frequency; semiconductors; separate-confinement-heterostructure; strained InGaAs-GaAs single quantum well lasers; structure-dependent damping mechanism; Bandwidth; Damping; Frequency response; Gallium arsenide; Laser noise; Nonlinear optics; Optical saturation; Quantum well lasers; Resonance; Resonant frequency;
Journal_Title :
Photonics Technology Letters, IEEE
