Anomalously high damping in strained InGaAs-GaAs single quantum well lasers

Author

Sharfin, W.F. ; Schlafer, J. ; Rideout, W. ; Elman, B. ; Lauer, R.B. ; LaCourse, J. ; Crawford, F.D.

Author_Institution

GTE Lab. Inc., Waltham, MA, USA

Volume

3

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

193

Lastpage

195

Abstract

Measurements of the relative intensity noise spectra of strained, single-quantum-well, separate-confinement-heterostructure (SCH) InGaAs-GaAs lasers indicate that their frequency response is strongly damped. The ratio of the damping rate to the square of the resonance frequency is k=2.4 ns. This intrinsically limits the 3-dB modulation bandwidths of these lasers to about 4 GHz, negating the predicted increase in modulation bandwidth due to the large differential gain often associated with quantum-well devices. The damping behavior of these lasers is inconsistent with previous predictions of damping in bulk lasers due to spectral hole burning. A structure-dependent damping mechanism is proposed for quantum-well lasers.<>

Keywords

III-V semiconductors; damping; gallium arsenide; indium compounds; semiconductor junction lasers; 4 GHz; InGaAs-GaAs; damping rate; differential gain; frequency response; modulation bandwidths; relative intensity noise spectra; resonance frequency; semiconductors; separate-confinement-heterostructure; strained InGaAs-GaAs single quantum well lasers; structure-dependent damping mechanism; Bandwidth; Damping; Frequency response; Gallium arsenide; Laser noise; Nonlinear optics; Optical saturation; Quantum well lasers; Resonance; Resonant frequency;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.79750

Filename

79750