DocumentCode
1254281
Title
AlGaAs grating surface-emitting beam deflector with ridge structure
Author
Nagata, Hisao ; Komaba, Nobuyuki ; Yamashita, Ken
Volume
3
Issue
3
fYear
1991
fDate
3/1/1991 12:00:00 AM
Firstpage
222
Lastpage
224
Abstract
A ridge-waveguide-type AlGaAs grating surface-emitting beam deflector was fabricated. The deflection is controlled by carrier-induced refractive-index change of the waveguide. The maximum deflection angle change is about 0.6 degrees , which corresponds to about ten resolvable spots. The temperature raising of the active layer was estimated in comparison with the characteristics for direct and pulsed current operation. It was 6.5 degrees C for the injection current (DC) of 20 mA.<>
Keywords
III-V semiconductors; aluminium compounds; diffraction gratings; electro-optical devices; gallium arsenide; integrated optics; optical deflectors; 20 mA; 6.5 degC; AlGaAs; active layer; carrier-induced refractive-index change; injection current; maximum deflection angle change; pulsed current; resolvable spots; ridge-waveguide-type AlGaAs grating surface-emitting beam deflector; semiconductors; Etching; Gratings; Laser beams; Optical modulation; Optical refraction; Optical surface waves; Optical switches; Optical variables control; Optical waveguides; Refractive index;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.79760
Filename
79760
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