Title :
Monolithic GaInAs/InP FET inverter amplifiers for long-wavelength OEICs
Author :
Dawe, P.J.G. ; Lee, Woo Seung ; Antell, G.R. ; Bland, S.W.
Author_Institution :
STC Technol. Ltd., Harlow
fDate :
10/13/1988 12:00:00 AM
Abstract :
Monolithically integrated inverter amplifiers based on MOCVD-grown GaInAs/InP heterojunction FETs have been made 1 μm-gate-length FETs exhibited a typical pinch-off voltage of -1.5 V, transconductance of 160 mS/mm and DC drain conductance of 2-4 mS/mm, at zero gate bias. Amplifier voltage gain as high as 27 was measured at DC, dropping to 11 above 1 MHz due to the presence of an extra frequency-dependent drain conductance component
Keywords :
III-V semiconductors; amplifiers; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; linear integrated circuits; optical communication equipment; -1.5 V; 1 micron; 160 mS; 2 to 4 mS; DC drain conductance; FET inverter amplifiers; GaInAs-InP; III-V semiconductors; JFET; MOCVD grown heterojunction devices; integrated optoelectronics; long-wavelength OEICs; micron gate length; monolithic IC; optical receivers; pinch-off voltage; transconductance;
Journal_Title :
Electronics Letters
