Use of picosecond optical pulses and FET´s integrated with printed circuit antennas to generate millimeter wave radiation

Author

Ni, D.C. ; Plant, D.V. ; Matloubian, M. ; Fetterman, H.R.

Volume

3

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

273

Lastpage

275

Abstract

Millimeter-wave radiation has been generated from field effect transistors (FETs) and high electron mobility transistors (HEMTs), integrated with printed circuit antennas and illuminated with picosecond optical pulses. Modulation of the millimeter waves was achieved by applying a swept RF signal to the transistor gate. Using this technique, tunable electrical sidebands were added to the optically generated carrier providing a method of transmitting information. The technique also provides increased resolution for use in spectroscopic applications. Heterodyne detection demonstrated that the system continuously generated tunable radiation, constrained by the high-gain antenna, from 45 to 75 GHz.<>

Keywords

field effect integrated circuits; high electron mobility transistors; high-speed optical techniques; printed circuits; solid-state microwave circuits; tuning; 45 to 75 GHz; EHF; HEMT; MM wave radiation; field effect transistors; heterodyne detection; high electron mobility transistors; high-gain antenna; microwave antennas; optically generated carrier; picosecond optical pulses; printed circuit antennas; spectroscopic applications; swept RF signal; transistor gate; tunable electrical sidebands; tunable radiation; FETs; HEMTs; MODFETs; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors; Optical pulse generation; Optical pulses; Printed circuits; Tunable circuits and devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.79778

Filename

79778