Title :
Cavity-induced antiguiding in a selectively oxidized vertical-cavity surface-emitting laser
Author :
Oh, T.-H. ; McDaniel, M.R. ; Huffaker, D.L. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
Cavity-induced antiguiding of a lasing mode is demonstrated in a vertical-cavity surface-emitting laser (VCSEL). Selective oxidation of a distributed Bragg reflector (DBR) layer is used to generate a spectrally red-shifted cavity region cladding the lasing mode, with a second selectively oxidized aperture used to form the current confinement to the antiguided mode. Near-field, far-field, and spectral measurements are used to characterize lasing in both the antiguided mode and the antiguiding region.
Keywords :
distributed Bragg reflector lasers; laser cavity resonators; laser modes; oxidation; quantum well lasers; surface emitting lasers; AlGaAs-GaAs; DBR layer; GaAs-AlAs; In/sub 0.2/Ga/sub 0.8/As; VCSEL; antiguided mode; antiguiding region; cavity-induced antiguiding; cladding; current confinement; distributed Bragg reflector; far-field measurements; lasing; lasing mode; near-field measurements; selective oxidation; selectively oxidized aperture; selectively oxidized vertical-cavity surface-emitting laser; spectral measurements; spectrally red-shifted cavity region; Distributed Bragg reflectors; Gallium arsenide; Laser modes; Optical resonators; Oxidation; Pump lasers; Resonance; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
