DocumentCode :
1254465
Title :
Quantum transistors and circuits break through the barriers
Author :
Capasso, Federico ; Sen, Satyaki ; Lunardi, L.M. ; Cho, Andrew Y.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Volume :
7
Issue :
3
fYear :
1991
fDate :
5/1/1991 12:00:00 AM
Firstpage :
18
Lastpage :
25
Abstract :
Resonant tunneling diodes and transistors, which are ´vertical´ quantum devices, in which the current flows perpendicular to the layers instead of along them, are discussed. The operation of both devices is explained. Various types of resonant tunneling transistor are examined, with particular attention to multistate devices. Applications to frequency multipliers, parity generators, and analog-to-digital converters are presented.<>
Keywords :
analogue-digital conversion; frequency multipliers; resonant tunnelling devices; tunnel diodes; analog-to-digital converters; frequency multipliers; multistate devices; parity generators; resonant tunneling transistor; resonant tunnelling diodes; Atomic beams; Circuits; Electrons; Epitaxial growth; Light emitting diodes; Molecular beam epitaxial growth; Molecular beams; P-n junctions; Photonic band gap; Resonant tunneling devices;
fLanguage :
English
Journal_Title :
Circuits and Devices Magazine, IEEE
Publisher :
ieee
ISSN :
8755-3996
Type :
jour
DOI :
10.1109/101.79792
Filename :
79792
Link To Document :
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