Title :
Thermal impedance of VCSELs with AlO/sub x/-GaAs DBRs
Author :
MacDougal, M.H. ; Geske, J. ; Chao-Kun Lin ; Bond, A.E. ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
The authors have measured the thermal impedance of vertical-cavity surface-emitting lasers (VCSELs) with oxide/GaAs DBRs and shown that it is comparable to that of VCSELs with all-semiconductor DBRs. A VCSEL with an 8-μm oxide aperture shows a thermal impedance of 2.8/spl deg/C/mW. By varying the aperture size, the thermal conductance of the material below the active area is 0.255 W/cm/spl deg/C. These results demonstrate that the oxide is not a major barrier to heat transport out of the active region.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; quantum well lasers; thermal conductivity; 8 mum; AlO-GaAs; AlO/sub x/-GaAs DBR; VCSEL; active area; active region; aperture size; heat transport; oxide aperture; oxide/GaAs DBR; thermal conductance; thermal impedance; vertical-cavity surface-emitting lasers; Apertures; Distributed Bragg reflectors; Impedance measurement; Mirrors; Surface emitting lasers; Surface impedance; Temperature; Thermal resistance; Vertical cavity surface emitting lasers; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
