Title :
Semiconductor photonic functional devices
Author :
Kawaguchi, Hitoshi
Author_Institution :
Yamagata Univ., Yonezawa, Japan
fDate :
5/1/1991 12:00:00 AM
Abstract :
Recent advances in semiconductor photonic functional devices based on the nonlinearities of laser diodes (LDs) are reviewed. Because the current research is driven primarily by the needs of optical fiber communications systems, most devices are made of InGaAsP and operate at wavelengths of between 1.3 and 1.55 mu m, the wavelength window in which optical fibers have their most favorable properties. Minimum loss is at 1.55 mu m, and zero dispersion is at 1.3 mu m. AlGaAs devices operating at around 0.85 mu m have also been reported. Two types of optical bistability-absorptive and dispersive-are explained, and devices based on them are described. Switching characteristics of bistable devices are discussed. Tunable wavelength converters and filters are also examined. Applications to all-optical communication and to optical switching systems are considered. Directions for future development are indicated.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical bistability; optical communication equipment; semiconductor junction lasers; 0.85 micron; 1.3 to 1.55 micron; AlGaAs; InGaAsP; all-optical communication; laser diodes; nonlinearities; optical bistability; optical fiber communications systems; optical switching systems; semiconductor photonic functional devices; Communication switching; Diode lasers; Optical bistability; Optical devices; Optical fiber communication; Optical fiber dispersion; Optical fibers; Optical filters; Optical losses; Tunable circuits and devices;
Journal_Title :
Circuits and Devices Magazine, IEEE