Title :
40-mW 650-nm distributed feedback lasers
Author :
Pezeshki, B. ; Zelinski, M. ; Zhao, H. ; Agrawal, V.
Author_Institution :
SDL Inc., San Jose, CA., USA
Abstract :
Using a buried second-order grating in a single-mode GaInP-AlInP laser structure, we obtain single-spatial- and longitudinal-mode operation at 652 nm. Over 40-mW continuous wave (CW) is obtained at room temperature (RT), with efficiencies and far fields comparable to conventional Fabry-Perot lasers. The devices are continuously tunable with current and temperature and exhibit no mode hops, and thus should be useful for applications where short wavelength and longitudinal mode stability is required, such as spectroscopy, interferometry, or optical storage.
Keywords :
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium compounds; indium compounds; laser accessories; laser feedback; laser modes; laser stability; laser tuning; laser variables measurement; optical fabrication; semiconductor device testing; semiconductor lasers; 298 K; 40 mW; 650 nm; 652 nm; Fabry-Perot lasers; GaInP-AlInP; GaInP-AlInP laser; buried second-order grating; continuous wave laser; continuously tunable laser; current; distributed feedback lasers; efficiencies; far fields; interferometry; longitudinal mode stability; longitudinal-mode operation; mode hops; optical storage; room temperature; short wavelength; single-mode laser; single-mode operation; spatial-mode operation; spectroscopy; temperature; Distributed feedback devices; Fabry-Perot; Gratings; Laser feedback; Laser modes; Optical interferometry; Spectroscopy; Stability; Temperature; Tunable circuits and devices;
Journal_Title :
Photonics Technology Letters, IEEE