Title :
Low-threshold laterally oxidized GaInP-AlGaInP quantum-well laser diodes
Author :
Floyd, P.D. ; Sun, D. ; Treat, D.W.
Author_Institution :
Electron. Mater. Lab., Xerox Palo Alto Res. Center, CA, USA
Abstract :
Low-threshold, high-efficiency edge-emitting visible AIGaInP-GaInP laser diodes using a buried AlAs native oxides for carrier and optical confinement are described. The lasers incorporate a thin AlAs layer in the upper cladding region, which when laterally wet oxidized, forms a narrow aperture. The lasers operate with room temperature, continuous-wave (CW) threshold currents of 11 mA with external differential quantum efficiency of 34% per facet for an uncoated 300-μm-long 3.5-μm-wide device. As-fabricated lasers exhibited modest performance under CW operation. Post-fabrication annealing was shown to dramatically improve the device characteristics.
Keywords :
III-V semiconductors; aluminium compounds; annealing; claddings; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser variables measurement; optical fabrication; oxidation; quantum well lasers; surface emitting lasers; 11 mA; 298 K; 3.5 mum; 300 mum; 34 percent; AlAs; CW operation; GaInP-AlGaInP; GaInP-AlGaInP quantum-well laser diodes; as-fabricated lasers; buried AlAs native oxides; carrier confinement; continuous-wave threshold currents; device characteristics; external differential quantum efficiency; laterally wet oxidation; low-threshold high-efficiency edge-emitting visible laser diode; narrow aperture; optical confinement; post-fabrication annealing; room temperature; thin AlAs layer; upper cladding region; Annealing; Carrier confinement; Diode lasers; Gallium arsenide; Laser modes; Optical losses; Oxidation; Quantum well lasers; Semiconductor lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
