Keywords :
Ge-Si alloys; III-V semiconductors; Schottky gate field effect transistors; bipolar MMIC; field effect MMIC; heterojunction bipolar transistors; high electron mobility transistors; integrated optoelectronics; land mobile radio; light emitting diodes; semiconductor lasers; semiconductor technology; technological forecasting; AlGaAs; AlInGaP; GaAs; GaN; GaP; III-V semiconductors; InGaAs; InGaN; InP; MMIC; SiGe; compound semiconductors; device applications; digital applications; future prospects; laser diodes; light-emitting diodes; manufacturing; mobile communications; optoelectronics; versatile materials;
