• DocumentCode
    1254743
  • Title

    Selective epitaxial growth Si resonant-cavity photodetector

  • Author

    Neudeck, Gerold W. ; Denton, Jack ; Qi, J. ; Schaub, J.D. ; Li, R. ; Camprbell, J.C.

  • Author_Institution
    Purdue Univ., West Lafayette, IN, USA
  • Volume
    10
  • Issue
    1
  • fYear
    1998
  • Firstpage
    129
  • Lastpage
    131
  • Abstract
    An novel resonant-cavity Si photodiode was fabricated using a selective epitaxial growth process. The photodiode shows a bandwidth over 5 GHz, and a quantum efficiency over 65% at 700 nm. Compared to the previously reported Si resonant-cavity Si photodetectors, this photodiode process is more compatible with Si integrated circuit technology.
  • Keywords
    epitaxial growth; integrated circuit technology; integrated optics; optical fabrication; optical resonators; photodetectors; photodiodes; semiconductor growth; silicon; 5 GHz; 65 percent; 700 nm; Si; Si integrated circuit technology compatability; Si resonant-cavity photodetector; bandwidth; photodiode process; quantum efficiency; resonant-cavity Si photodiode fabrication; selective epitaxial growth; Absorption; Bandwidth; Epitaxial growth; Etching; Integrated circuit technology; Mirrors; Molecular beam epitaxial growth; Photodetectors; Photodiodes; Resonance;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.651135
  • Filename
    651135
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1254743