Title :
Selective epitaxial growth Si resonant-cavity photodetector
Author :
Neudeck, Gerold W. ; Denton, Jack ; Qi, J. ; Schaub, J.D. ; Li, R. ; Camprbell, J.C.
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
An novel resonant-cavity Si photodiode was fabricated using a selective epitaxial growth process. The photodiode shows a bandwidth over 5 GHz, and a quantum efficiency over 65% at 700 nm. Compared to the previously reported Si resonant-cavity Si photodetectors, this photodiode process is more compatible with Si integrated circuit technology.
Keywords :
epitaxial growth; integrated circuit technology; integrated optics; optical fabrication; optical resonators; photodetectors; photodiodes; semiconductor growth; silicon; 5 GHz; 65 percent; 700 nm; Si; Si integrated circuit technology compatability; Si resonant-cavity photodetector; bandwidth; photodiode process; quantum efficiency; resonant-cavity Si photodiode fabrication; selective epitaxial growth; Absorption; Bandwidth; Epitaxial growth; Etching; Integrated circuit technology; Mirrors; Molecular beam epitaxial growth; Photodetectors; Photodiodes; Resonance;
Journal_Title :
Photonics Technology Letters, IEEE
