DocumentCode
1254841
Title
Modeling and performance of microscale thermophotovoltaic energy conversion devices
Author
Whale, MacMurray D. ; Cravalho, Ernest G.
Author_Institution
Dept. of Mech. Eng., Victoria Univ., BC, Canada
Volume
17
Issue
1
fYear
2002
fDate
3/1/2002 12:00:00 AM
Firstpage
130
Lastpage
142
Abstract
We analyze the feasibility of energy conversion devices that exploit microscale radiative transfer of thermal energy in thermophotovoltaic devices. By bringing a hot source of thermal energy very close to a receiver fashioned as a pn-junction, the near-field effect of radiation tunneling can enhance the net power flux. We use the fluctuational electrodynamic approach to microscale radiative transfer to account for the spacing effect, which provides the net transfer of photons to the receiver as a function of the separation between the emitter and receiver. We calculate the power output from the microscale device using standard thermophotovoltaic device relations. The results for the performance of a device based on indium gallium arsenide indicate that a ten-fold increase in power throughput may be realized with little loss in efficiency. Furthermore, we develop a model of the microscale device itself that indicates the influence of semiconductor band-gap, energy, carrier lifetime and doping
Keywords
III-V semiconductors; carrier lifetime; energy gap; gallium arsenide; heat radiation; indium compounds; p-n junctions; semiconductor doping; thermophotovoltaic cells; In1-xGaxAs; carrier lifetime; doping; emitter; fluctuational electrodynamics; indium gallium arsenide; microscale thermophotovoltaic energy conversion devices; near-field effect; net power flux enhancement; photons; pn-junction; power throughput; radiation tunneling; radiative transfer; receiver; semiconductor band-gap energy; spacing effect; thermal energy transfer; thermophotovoltaic devices; Electrodynamics; Energy conversion; Indium gallium arsenide; Near-field radiation pattern; Optical receivers; Performance loss; Photonic band gap; Semiconductor process modeling; Throughput; Tunneling;
fLanguage
English
Journal_Title
Energy Conversion, IEEE Transactions on
Publisher
ieee
ISSN
0885-8969
Type
jour
DOI
10.1109/60.986450
Filename
986450
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