• DocumentCode
    1254841
  • Title

    Modeling and performance of microscale thermophotovoltaic energy conversion devices

  • Author

    Whale, MacMurray D. ; Cravalho, Ernest G.

  • Author_Institution
    Dept. of Mech. Eng., Victoria Univ., BC, Canada
  • Volume
    17
  • Issue
    1
  • fYear
    2002
  • fDate
    3/1/2002 12:00:00 AM
  • Firstpage
    130
  • Lastpage
    142
  • Abstract
    We analyze the feasibility of energy conversion devices that exploit microscale radiative transfer of thermal energy in thermophotovoltaic devices. By bringing a hot source of thermal energy very close to a receiver fashioned as a pn-junction, the near-field effect of radiation tunneling can enhance the net power flux. We use the fluctuational electrodynamic approach to microscale radiative transfer to account for the spacing effect, which provides the net transfer of photons to the receiver as a function of the separation between the emitter and receiver. We calculate the power output from the microscale device using standard thermophotovoltaic device relations. The results for the performance of a device based on indium gallium arsenide indicate that a ten-fold increase in power throughput may be realized with little loss in efficiency. Furthermore, we develop a model of the microscale device itself that indicates the influence of semiconductor band-gap, energy, carrier lifetime and doping
  • Keywords
    III-V semiconductors; carrier lifetime; energy gap; gallium arsenide; heat radiation; indium compounds; p-n junctions; semiconductor doping; thermophotovoltaic cells; In1-xGaxAs; carrier lifetime; doping; emitter; fluctuational electrodynamics; indium gallium arsenide; microscale thermophotovoltaic energy conversion devices; near-field effect; net power flux enhancement; photons; pn-junction; power throughput; radiation tunneling; radiative transfer; receiver; semiconductor band-gap energy; spacing effect; thermal energy transfer; thermophotovoltaic devices; Electrodynamics; Energy conversion; Indium gallium arsenide; Near-field radiation pattern; Optical receivers; Performance loss; Photonic band gap; Semiconductor process modeling; Throughput; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Energy Conversion, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8969
  • Type

    jour

  • DOI
    10.1109/60.986450
  • Filename
    986450