Low-noise cryogenic X-band amplifier using wet-etched hydrogen passivated InP HEMT devices

Author

Lopez-Fernandez, I. ; Puyol, J.D.G. ; Homan, O.J. ; Cancio, A.B.

Author_Institution

Obs. Astron. Nacional, Centro Astron. de Yebes, Guadalajara, Spain

Volume

9

Issue

10

fYear

1999

Firstpage

413

Lastpage

415

Abstract

The performance of a cryogenically cooled X-band amplifier for the geodetic VLBI X-band (8.1-9.0 GHz) is presented. The amplifier incorporates hydrogen passivated InP devices with 0.2×200 μm gate. A comparison of the noise performance with selected commercially available GaAs high electron mobility transistor (HEMT) devices of similar dimensions is presented. The InP amplifier shows lower noise temperature (Tn=4.8 K, NF=0.07 dB) than GaAs, with very low power dissipation (2 mW per stage). This is the first report on the cryogenic noise performance of hydrogen passivated InP HEMT´s in this frequency band.

Keywords

HEMT circuits; III-V semiconductors; circuit noise; cryogenic electronics; high electron mobility transistors; indium compounds; microwave amplifiers; microwave field effect transistors; passivation; semiconductor device noise; 0.07 dB; 13 K; 2 mW; 8.1 to 9 GHz; InP; InP HEMT devices; X-band LNA; cryogenic X-band amplifier; cryogenic noise performance; geodetic VLBI; high electron mobility transistors; hydrogen passivated devices; low power dissipation; low-noise amplifier; wet etching; Cryogenics; Frequency; Gallium arsenide; HEMTs; Hydrogen; Indium phosphide; Low-noise amplifiers; MODFETs; Power dissipation; Temperature;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.798033

Filename

798033