Title :
Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT´s
Author :
Hwang, K.C. ; Chao, P.C. ; Creamer, C. ; Nichols, K.B. ; Wang, Shuhui ; Tu, D. ; Kong, W. ; Dugas, D. ; Patton, G.
Author_Institution :
Microwave, Space & Mission Electron., Sanders, Lockheed Martin Co., Nashua, NH, USA
Abstract :
We report the first demonstration of W-band metamorphic HEMTs/LNA MMICs using an AlGaAsSb lattice strain relief buffer layer on a GaAs substrate. 0.1×50 μm low-noise devices have shown typical extrinsic transconductance of 850 mS/mm with high maximum drain current of 700 mA/mm and gate-drain breakdown voltage of 4.5 V. Small-signal S-parameter measurements performed on the 0.1-μm devices exhibited an excellent fT of 225 GHz and maximum stable gain (MSG) of 12.9 dB at 60 GHz and 10.4 dB at 110 GHz. The three-stage W-band LNA MMIC exhibits 4.2 dB noise figure with 18 dB gain at 82 GHz and 4.8 dB noise figure with 14 dB gain at 89 GHz, The gain and noise performance of the metamorphic HEMT technology is very close to that of the InP-based HEMT.
Keywords :
HEMT integrated circuits; MMIC amplifiers; S-parameters; field effect MIMIC; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave measurement; semiconductor device breakdown; semiconductor device measurement; 0.1 micron; 10.4 dB; 110 GHz; 12.9 dB; 14 dB; 18 dB; 225 GHz; 4.2 dB; 4.5 V; 4.8 dB; 60 GHz; 82 GHz; 89 GHz; InAlAs-InGaAs-GaAs; LNA MMICs; W-band; drain current; extrinsic transconductance; gate-drain breakdown voltage; lattice strain relief buffer layer; low-noise devices; maximum stable gain; millimeter-wave metamorphic HEMTs; small-signal S-parameter measurements; Gallium arsenide; Indium compounds; Indium gallium arsenide; Lattices; MMICs; Millimeter wave technology; Noise figure; Performance gain; Strain measurement; mHEMTs;
Journal_Title :
Electron Device Letters, IEEE
