Title :
Performance dependence of InGaP/InGaAs/GaAs pHEMTs on gate metallization
Author :
Fay, P. ; Stevens, K. ; Elliot, J. ; Pan, N.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Abstract :
The performance of InGaP-based pHEMTs as a function of gate metallization is examined for Mo/Au, Ti/Au, and Pt/Au gates. DC and microwave performance of pHEMT´s with 0.7-μm gate lengths is evaluated. Transconductance, threshold voltage, fT, and fmax are found to depend strongly on gate metallization. High-speed performance is achieved, with fT of 41.3 GHz and fmax of 101 GHz using Mo/Au gates. The difference in performance between devices with different gate metallizations is postulated to be due to a combination of the difference in Schottky barrier heights and different gate-to-channel spacings due to penetration of the gate metal into the InGaP barrier layer.
Keywords :
III-V semiconductors; Schottky barriers; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device metallisation; 0.7 micron; 101 GHz; 41.3 GHz; III-V semiconductors; InGaP-InGaAs-GaAs; Mo-Au; Pt-Au; Schottky barrier heights; Ti-Au; barrier layer; gate metallization; gate-to-channel spacings; microwave performance; pHEMTs; penetration; threshold voltage; transconductance; Etching; Gallium arsenide; Gold; Indium gallium arsenide; Metallization; Microwave devices; PHEMTs; Schottky barriers; Threshold voltage; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
