A polycrystalline silicon thin-film transistor with a thin amorphous buffer

Author

Kyung Wook Kim ; Kyu Sik Cho ; Jin Jang

Author_Institution

Dept. of Phys., Kyung Hee Univ., Seoul, South Korea

Volume

20

Issue

11

fYear

1999

Firstpage

560

Lastpage

562

Abstract

We have developed a novel, low off-state leakage current polycrystalline silicon (poly-Si) thin-film transistor (TFT) by introducing a very thin hydrogenated amorphous silicon (a-Si:H) buffer on the poly-Si active layer. The a-Si:H buffer is formed on the whole poly-Si and thus no additional mask step is needed. With an a-Si:H buffer on poly-Si, the off-state leakage current of a coplanar TFT is remarkably reduced, while the reduction of the on-state current is relatively small. The poly-Si TFT with an a-Si:H buffer exhibited a field effect mobility of 12 cm²/Vs and an off-state leakage current of 3 fA/μm at the drain voltage of 1 V and the gate voltage of -5 V.

Keywords

MISFET; amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; leakage currents; liquid crystal displays; silicon; thin film transistors; -5 V; 1 V; LCD application; Si-Si:H-SiN; a-Si:H buffer; coplanar TFT; field effect mobility; hydrogenated amorphous Si; low offstate leakage current; poly-Si active layer; poly-Si thin-film transistor; polycrystalline Si; polysilicon TFT; thin amorphous buffer; Active matrix liquid crystal displays; Amorphous materials; Amorphous silicon; Leakage current; Optical device fabrication; Production; Silicides; Switching circuits; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.798043

Filename

798043