Title :
Reverse short-channel effect in metal-induced laterally crystallized polysilicon thin-film transistors
Author :
Wong, Man ; Bhat, Gururaj A. ; Kwok, Hoi S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
Abstract :
A reverse short-channel effect, manifested by an increase in the transistor threshold voltage as the channel length is reduced, is observed in conventional metal-induced laterally crystallized thin-film transistors. Such an effect has not been observed in regular solid phase crystallized thin-film transistors and can be eliminated by a brief hydrogen plasma treatment.
Keywords :
MOSFET; crystallisation; elemental semiconductors; grain boundaries; passivation; silicon; thin film transistors; AMLCD; H; H plasma treatment; Si-SiO/sub 2/; active matrix LCD; channel length reduction; metal-induced laterally crystallized TFT; polysilicon TFTs; polysilicon thin-film transistors; reverse short-channel effect; transistor threshold voltage; Active matrix liquid crystal displays; Crystallization; Hydrogen; Leakage current; Microwave integrated circuits; Plasma temperature; Silicon; Solids; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
