Role of hole fluence in gate oxide breakdown

Author

Li, M.-F. ; He, Y.D. ; Ma, S.G. ; Cho, B.J. ; Lo, K.F. ; Xu, M.Z.

Author_Institution

Center for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore

Volume

20

Issue

11

fYear

1999

Firstpage

586

Lastpage

588

Abstract

A simple model which links the primary hole and Fowler-Nordheim (FN) electron injections to oxide breakdown is established and the calculation based on this model is in good agreement with our experiments. When the sum of the active trap density D/sup pri/ due to primary hole injection and the active trap density D/sup n/ due to FN electron injection reaches a critical value D/sub cri/, the oxide breaks down. The hole is two orders of magnitude more effective than FN electron in causing breakdown. These new findings are imperative in predicting oxide reliability and device lifetime.

Keywords

MOSFET; charge injection; electron traps; hole traps; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; Fowler-Nordheim electron injection; MOST; active trap density; device lifetime; gate oxide breakdown; hole fluence role; model; oxide reliability; primary hole injection; Charge carrier processes; Electric breakdown; Electron traps; Failure analysis; Integrated circuit technology; Substrates; Switches; Testing; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.798052

Filename

798052