Enhanced optical coupling performance in an InGaAs photodiode integrated with wet-etched microlens

Author

Cho, S.R. ; Kim, J. ; Oh, K.S. ; Yang, S.K. ; Baek, J.M. ; Jang, D.H. ; Kim, T.I. ; Jeon, H.

Author_Institution

Optoelectron. Div, Samsung Electron. Corp, Suwon, South Korea

Volume

14

Issue

3

fYear

2002

fDate

3/1/2002 12:00:00 AM

Firstpage

378

Lastpage

380

Abstract

In this letter, we report over 50% enhancement in optical coupling tolerance between a single-mode fiber and a photodiode. The enhancement is made possible by integrating a microlens on the polished backside of an InGaAs photodiode device. The microlenses are fabricated by one step wet chemical etching in the mixed solution of bromic acid and hydrogen peroxide. Surface profiles of the microlenses are simulated using the finite-difference-method to solve a simplified diffusion model. The optical coupling tolerance is also theoretically calculated based on ray optics, of which results show an excellent agreement with the experimental data.

Keywords

III-V semiconductors; etching; gallium arsenide; indium compounds; microlenses; optical fabrication; optical fibre couplers; p-i-n photodiodes; polishing; InGaAs; InGaAs photodiode; bromic acid; diffusion model; enhanced optical coupling performance; finite-difference-method; hydrogen peroxide; microlens; microlenses; mixed solution; one step wet chemical etching; optical coupling tolerance; photodiode; polished backside; ray optics; single-mode fiber; wet-etched microlens; Computational modeling; Indium gallium arsenide; Lenses; Microoptics; Optical coupling; Optical device fabrication; Optical refraction; PIN photodiodes; Scanning electron microscopy; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.986819

Filename

986819