• DocumentCode
    1255432
  • Title

    Monolithic vertical cavity device lasing at 1.55 μm in InGaAlAs system

  • Author

    Debray, J.P. ; Bouche, N. ; Le Roux, R. ; Raj, Ranga ; Quillec, M.

  • Author_Institution
    France Telecom, CNET, Bagneux
  • Volume
    33
  • Issue
    10
  • fYear
    1997
  • fDate
    5/8/1997 12:00:00 AM
  • Firstpage
    868
  • Lastpage
    869
  • Abstract
    The authors present the first demonstration of a monolithic vertical cavity laser optically pumped at 1.55 μm. The laser cavity is grown in a single run by low pressure MOVPE and the total thickness is 16.4 μm with an InGaAlAs (λx=1.55 μm) bulk active region (3λ/2 thick) between two InGaAlAs (λx =1.45 μm)/InAlAs Bragg stacks
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical pumping; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth; 1.55 micron; Bragg stack; InGaAlAs; low pressure MOVPE growth; monolithic vertical cavity device lasing; optical pumping;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970568
  • Filename
    592621
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1255432