Title :
Monolithic vertical cavity device lasing at 1.55 μm in InGaAlAs system
Author :
Debray, J.P. ; Bouche, N. ; Le Roux, R. ; Raj, Ranga ; Quillec, M.
Author_Institution :
France Telecom, CNET, Bagneux
fDate :
5/8/1997 12:00:00 AM
Abstract :
The authors present the first demonstration of a monolithic vertical cavity laser optically pumped at 1.55 μm. The laser cavity is grown in a single run by low pressure MOVPE and the total thickness is 16.4 μm with an InGaAlAs (λx=1.55 μm) bulk active region (3λ/2 thick) between two InGaAlAs (λx =1.45 μm)/InAlAs Bragg stacks
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical pumping; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth; 1.55 micron; Bragg stack; InGaAlAs; low pressure MOVPE growth; monolithic vertical cavity device lasing; optical pumping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970568
