DocumentCode :
1255444
Title :
Corrosion criteria for electronic packaging. I. A framework for corrosion of integrated circuits
Author :
Hoge, Carl E.
Author_Institution :
Western Digital Corp., Irvine, CA, USA
Volume :
13
Issue :
4
fYear :
1990
fDate :
12/1/1990 12:00:00 AM
Firstpage :
1090
Lastpage :
1097
Abstract :
A framework for aluminum corrosion is presented which identifies aluminum ion diffusion through a dielectric film as the rate-determining step for the process. A mathematical description of corrosion currents based on this framework is also presented. The activation energy for migration of the ion through the film is shown to be dependent on the activation energy for chemical diffusion and the magnitude of the electric field which is established across the dielectric film as a result of an externally applied bias
Keywords :
aluminium; corrosion; integrated circuit technology; metallisation; packaging; Al corrosion; Al3+ ion diffusion; Al3+ ion migration; IC packaging; activation energy; chemical diffusion; corrosion currents; dielectric film; electric field magnitude; electronic packaging; integrated circuit corrosion; rate-determining step; Aluminum; Chemicals; Corrosion; Current measurement; Dielectric films; Electronics packaging; Oxidation; Plastic packaging; Process design; Silicon;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/33.62553
Filename :
62553
Link To Document :
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