Title :
Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation
Author :
Choi, B.K. ; Fleetwood, D.M. ; Massengill, L.W. ; Schrimpf, R.D. ; Galloway, K.F. ; Shaneyfelt, M.R. ; Meisenheimer, T.L. ; Dodd, P.E. ; Schwank, J.R. ; Lee, Y.-M. ; Johnson, R.S. ; Lucovsky, G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
fDate :
2/14/2002 12:00:00 AM
Abstract :
The charge-to-breakdown of 3.3 nm oxynitride films shows significant degradation after irradiation with 342 MeV An ions. In contrast, 5.4 rim Al2O3 films exhibit much less degradation for similar heavy-ion stress
Keywords :
MOS capacitors; MOSFET; Weibull distribution; alumina; dielectric thin films; ion beam effects; leakage currents; radiation hardening (electronics); semiconductor device reliability; silicon compounds; 3.3 nm; 342 MeV; 5.4 nm; Al2O3; MOS capacitors; SiON; alumina gate dielectric films; charge-to-breakdown; heavy-ion irradiation; reliability degradation; single-event gate rupture; ultrathin oxynitride films;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020119
