DocumentCode
1255616
Title
InGaP/InAsP MQW complex-coupled DFB taperless laser with large spot size and high coupling efficiency
Author
Kamoun, Mohamed ; Bouadma, N. ; Talneau, A. ; Ougazzaden, A.
Author_Institution
Lab. de Bagneux, CNET, Bagneux
Volume
33
Issue
10
fYear
1997
fDate
5/8/1997 12:00:00 AM
Firstpage
906
Lastpage
907
Abstract
The authors report a novel large spot size complex-coupled DFB laser, without a mode converter and using an MQW core structure with a low effective refractive index. It operates on a singlemode basis with an SMSR as high as 40 dB and a linewidth as narrow as 2 MHz, and provides good coupling characteristics into cleaved optical fibres. The device was fabricated by a conventional buried heterostructure laser process and the grating was provided by partly etching the well stack
Keywords
III-V semiconductors; distributed feedback lasers; etching; gallium compounds; indium compounds; laser frequency stability; quantum well lasers; refractive index; InGaP-InAsP; MQW core structure; SMSR; buried heterostructure laser process; cleaved optical fibres; complex-coupled DFB taperless laser; coupling efficiency; effective refractive index; linewidth; side mode suppression ratio; singlemode basis; spot size; well stack etching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970580
Filename
592653
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