• DocumentCode
    1255623
  • Title

    Lateral insulated gate bipolar transistor (LIGBT) structure based on partial isolation SOI technology

  • Author

    Udrea, F. ; Milne, W. ; Popescu, Adrian

  • Author_Institution
    Dept. of Eng., Cambridge Univ.
  • Volume
    33
  • Issue
    10
  • fYear
    1997
  • fDate
    5/8/1997 12:00:00 AM
  • Firstpage
    907
  • Lastpage
    909
  • Abstract
    A new LIGBT structure is proposed based on partial isolation SOI technology and demonstrated through numerical simulations. In comparison with conventional SOI LIGBITs, the new structure offers an enhanced RESURF (REduced SURface Field) effect and improved heat dissipation with no compromise in the switching speed and on-state resistance
  • Keywords
    insulated gate bipolar transistors; isolation technology; power semiconductor switches; silicon-on-insulator; RESURF; heat dissipation; lateral insulated gate bipolar transistor; on-state resistance; partial isolation SOI technology; reduced surface field effect; switching speed;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970587
  • Filename
    592654
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1255623