Title :
Photo-induced deposition of low dielectric constant polyimide film for interlayer dielectric applications
Author :
Jun-ying Zhang ; Boyd, I.W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London
fDate :
5/8/1997 12:00:00 AM
Abstract :
The photo-assisted conversion of polyamic acid spun onto Si substrates into thin polyimide films at low temperature using a 172 nm excimer lamp is reported. Current-voltage measurements showed that the leakage current densities in the polymer were over an order of magnitude less than those obtained in films prepared by conventional thermal processing
Keywords :
dielectric thin films; integrated circuit interconnections; leakage currents; permittivity; polymer films; semiconductor technology; 172 nm; Si; current-voltage measurements; dielectric constant; interlayer dielectric applications; leakage current densities; polyamic acid; polyimide film;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970603
