Title :
Temperature dependence of turn-on process in 4H-SiC thyristors
Author :
Dyakonova, Nina V. ; Levinshtein, M.E. ; Palmour, John W. ; Rumyantsev, S.L. ; Singh, Rajdeep
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg
fDate :
5/8/1997 12:00:00 AM
Abstract :
The turn-on process in 4H-SiC thyristors with a forward blocking voltage Uh≃400 V has been investigated in the temperature range 160-500 K. The time constant of the current rise τ r decreases monotonically with temperature, increasing from τr≃63 ns at T=160 K to τr=1.9 ns at T=495 K
Keywords :
semiconductor materials; silicon compounds; thyristors; 160 to 500 K; 400 V; SiC; current rise; forward blocking voltage; thyristors; time constant; turn-on process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970563
