DocumentCode :
12560
Title :
Fabrication of MKIDS for the MicroSpec Spectrometer
Author :
Patel, Anup ; Brown, Andrew ; Hsieh, W. ; Stevenson, Tim ; Moseley, Samuel H. ; U-Yen, K. ; Ehsan, N. ; Barrentine, E. ; Manos, G. ; Wollack, E.J.
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, MD, USA
Volume :
23
Issue :
3
fYear :
2013
fDate :
Jun-13
Firstpage :
2400404
Lastpage :
2400404
Abstract :
Microspec is a new class of submillimeter and millimeter (250-700 μm wavelength) spectrometer, in which the wavelength separation and detection of incident light is done on a single substrate. The instrument is designed for space exploration by offering high spectral resolving power over a broad band, while being orders of magnitude smaller in mass and volume than the present state-of-the-art. The key enabling components for Microspec are background-limited microwave kinetic inductance detectors, which operate over the full bandwidth of the spectrometer. Here we present our fabrication strategy for making these sensitive detectors. A microstrip architecture utilizing a 0.45-μm crystalline silicon dielectric with a molybdenum nitride kinetic inductor material has been adopted. We have optimized wafer-scale lithographic patterning, and have developed processes that allow us to minimize surface roughness that may contribute to detector noise. Additionally, we have optimized the low-temperature wafer bonding process; this process allows us to build superconductors on both sides of the silicon dielectric layer. We present a final fabricated device and resonator operation at cryogenic temperatures.
Keywords :
cryogenics; lithography; microwave detectors; millimetre wave detectors; molybdenum compounds; silicon; submillimetre wave detectors; superconducting microwave devices; surface roughness; wafer bonding; MKIDS fabrication; background-limited microwave kinetic inductance detectors; broad band; cryogenic temperatures; crystalline silicon dielectric; detector noise; fabricated device; fabrication strategy; full bandwidth; incident light detection; low-temperature wafer bonding process; microspec spectrometer; microstrip architecture; molybdenum nitride kinetic inductor material; resonator operation; sensitive detectors; silicon dielectric layer; size 0.45 mum; space exploration; spectral resolving power; submillimeter wavelength spectrometer; surface roughness; wafer-scale lithographic patterning; wavelength 250 mum to 700 mum; wavelength separation; Detectors; Dielectrics; Fabrication; Microstrip; Niobium; Silicon; Substrates; Microstrip devices; microwave kinetic inductance detector (MKID); molybdenum nitride; niobium; spectrometer; wafer bonding;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2013.2240152
Filename :
6412773
Link To Document :
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