Title :
Capacity limits and matching properties of integrated capacitors
Author :
Aparicio, Roberto ; Hajimiri, Ali
Author_Institution :
California Inst. of Technol., Pasadena, CA, USA
fDate :
3/1/2002 12:00:00 AM
Abstract :
Theoretical limits for the capacitance density of integrated capacitors with combined lateral and vertical field components are derived. These limits are used to investigate the efficiency of various capacitive structures such as lateral flux and quasifractal capacitors. This study leads to two new capacitor structures with high lateral-field efficiencies. These new capacitors demonstrate larger capacities, superior matching properties, tighter tolerances, and higher self-resonance frequencies than the standard horizontal parallel plate and previously reported lateral-field capacitors, while maintaining comparable quality factors. These superior qualities are verified by simulation and experimental results
Keywords :
CMOS integrated circuits; Q-factor; capacitance; capacitors; integrated circuit measurement; CMOS compatible; capacitance density; capacity limits; combined lateral/vertical field components; integrated capacitors; lateral flux; lateral-field efficiencies; matching properties; quality factors; quasifractal capacitors; self-resonance frequencies; tolerances; Calibration; Capacitance measurement; Circuit simulation; Digital integrated circuits; Fractals; Linearity; Q factor; Radio frequency; Switched capacitor circuits; Wires;
Journal_Title :
Solid-State Circuits, IEEE Journal of
