Simulation study of compact quantising circuits using multiple-resonant tunnelling transistors

The authors have applied a simple modelling approach for multiple resonant tunnelling transistors (mRTTs) which includes four resonant tunnelling diodes (RTDs) within the transistor structure. Unique features of this model, corresponding to device features compatible for integrated circuits, allow far tuning and matching the devices for optimum circuit performance. Two circuits are presented for analogue to quaternary conversion with analysis of their transfer characteristics; this analysis is consistent with the simulation results and implies that circuits of physical devices may be successfully implemented