Title :
High-frequency small signal AC and noise modeling of MOSFETs for RF IC design
Author :
Cheng, Yuhua ; Chen, Chih-Hung ; Matloubian, Mishel ; Deen, M. Jamal
Author_Institution :
Conexant Syst., Newport Beach, CA, USA
fDate :
3/1/2002 12:00:00 AM
Abstract :
High-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF) integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects of parasitics is presented. This model is compared with the measured data for both y parameter and fT characteristics. Good model accuracy is achieved against measurements for a 0.25 μm RF CMOS technology. The HF noise predictivity of the model is also examined with measured data. Furthermore, a methodology to extract the channel thermal noise of MOSFETs from HF noise measurements is presented. By using the extracted channel thermal noise, any thermal noise models can be verified directly. Several noise models including the RF model discussed in this paper have been examined, and the results show that the RF model can predict the channel thermal noise better than the other models
Keywords :
CMOS integrated circuits; MOSFET; UHF integrated circuits; circuit simulation; field effect MMIC; integrated circuit design; integrated circuit modelling; integrated circuit noise; thermal noise; 0.25 micron; CMOS technology; MOSFETs; RF IC design; channel thermal noise; circuit simulation; high-frequency small signal ac modeling; noise modeling; parasitics; subcircuit RF model; Hafnium; Integrated circuit measurements; Integrated circuit modeling; Integrated circuit noise; MOSFETs; Predictive models; RF signals; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
