Title :
Void free bonding of large silicon dice using gold-tin alloys
Author :
Matijasevic, G.S. ; Wang, Chen Y. ; Lee, Chin C.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
The successful bonding of large (6 mm×10 mm) silicon dice on alumina substrates with Au-Sn eutectic using a particular bonding technique is described. The bonding quality was examined by a scanning acoustic microscope having a resolution of 25 μm and it was found that nearly perfect bondings have been achieved. Use of Au-Sn alloy rather than Au-Si resulted in not only lower processing temperature but also lower stress on the dice. This is confirmed by simple stress analysis. The die-bonded specimens endured 40 cycles of thermal shock between -196°C (liquid nitrogen) and +160°C (boiling cyclohexanol) without cracking or bond degradation despite the significant mismatch of thermal expansion coefficients between silicon and alumina. Storage tests at -196 and 250°C also do not induce cracking or bond degradation. Pull test results indicate that the bondings are stronger than the silicon dice themselves
Keywords :
adhesion; elemental semiconductors; gold alloys; microassembling; packaging; silicon; soldering; thermal shock; tin alloys; -196 to 160 degC; 10 mm; 6 mm; Al2O3; Au-Sn eutectic; AuSn; bond strength; bonding quality; bonding technique; large Si dice void free bonding; microscope resolution; processing temperature; pull testing; scanning acoustic microscope; semiconductor device chip bonding; stress analysis; thermal expansion coefficients; thermal shock; Bonding; Electric shock; Gold alloys; Microscopy; Silicon alloys; Temperature; Testing; Thermal degradation; Thermal expansion; Thermal stresses;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on