Analysis on high-frequency characteristics of SOI lateral BJTs with self-aligned external base for 2-GHz RF applications

Author

Shino, Tomoaki ; Yoshitomi, Sadayuki ; Nii, Hideaki ; Kawanaka, Shigeru ; Inoh, Kazumi ; Yamada, Takashi ; Fuse, Tsuneaki ; Katsumata, Yasuhiro ; Yoshimi, Makoto ; Watanabe, Shigeyoshi ; Matsunaga, Jun-Ichi

Author_Institution

Toshiba Corp., Yokohama, Japan

Volume

49

Issue

3

fYear

2002

fDate

3/1/2002 12:00:00 AM

Firstpage

414

Lastpage

421

Abstract

High-frequency characteristics of SOI lateral BJTs designed for 2-GHz radio frequency (RF) applications are measured and compared for various link-base length, emitter width, and collector structure. Based on experimental data and device simulation, degradation mechanism of cutoff frequency for shorter link-base is analyzed. By suppressing external base-induced effects, peak cutoff frequency is increased from 10 GHz to 15 GHz

Keywords

UHF bipolar transistors; semiconductor technology; silicon-on-insulator; 15 GHz; 2 GHz; HF characteristics; RF applications; SOI lateral BJTs; Si; bipolar transistors; collector structure; cutoff frequency; degradation mechanism; device simulation; emitter width; external base-induced effects suppression; high-frequency characteristics; link-base length; offset length; self-aligned external base; Analytical models; Boron; Cutoff frequency; Degradation; Fabrication; Frequency measurement; Fuses; Length measurement; Radio frequency; Silicon compounds;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.987111

Filename

987111