Title :
Proposal of a Spin Torque Majority Gate Logic
Author :
Nikonov, Dmitri E. ; Bourianoff, George I. ; Ghani, Tahir
Author_Institution :
Components Res., Intel Corp., Santa Clara, CA, USA
Abstract :
A spin-based logic device is proposed. It is comprised of a common free ferromagnetic layer and four discrete ferromagnetic nanopillars, each containing an independent fixed layer. It has the functionality of a majority gate and is switched via motion of domain walls by spin transfer torque. Validity of its logic operation and a quantitative performance prediction are demonstrated by micromagnetic simulation. It is entirely compatible with complimentary metal-oxide-semiconductor technology.
Keywords :
CMOS logic circuits; ferromagnetic materials; logic gates; magnetic domain walls; micromagnetics; complimentary metal-oxide-semiconductor technology; discrete ferromagnetic nanopillars; domain walls; ferromagnetic layer; independent fixed layer; logic operation; majority gate logic; micromagnetic simulation; spin transfer torque; spin-based logic device; Logic gates; Magnetic domain walls; Magnetic domains; Magnetic tunneling; Magnetization; Switches; Torque; Logic; majority gate; spin transfer torque; spintronics;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2156379
