DocumentCode :
1256256
Title :
Vertical-Cavity Surface-Emitting Laser Light–Current Characteristic at Constant Internal Temperature
Author :
Hangauer, Andreas ; Chen, Jia ; Amann, Markus-Christian
Author_Institution :
Walter Schottky Inst., Tech. Univ. of Munich, Garching, Germany
Volume :
23
Issue :
18
fYear :
2011
Firstpage :
1295
Lastpage :
1297
Abstract :
Two continuous-wave measurement methods for the laser P-I-characteristic at a constant internal temperature are presented (constant average cavity and constant junction (active region) temperature). The methods are used to correctly quantify the temperature dependence of threshold current and differential quantum efficiency without need for pulsed measurements. It is found that the deviations between both temperatures can be as high as 5 K in a 1390-nm InP-based buried tunnel junction vertical-cavity surface-emitting laser (BTJ-VCSEL), which is the reason for the slight sublinearity of the characteristics at constant cavity temperature.
Keywords :
III-V semiconductors; indium compounds; surface emitting lasers; thermal variables measurement; InP; buried tunnel junction VCSEL; constant average cavity; constant internal temperature; constant junction temperature; differential quantum efficiency; light-current characteristic; threshold current; vertical-cavity surface-emitting laser; wavelength 1390 nm; Junctions; Measurement by laser beam; Temperature; Temperature measurement; Vertical cavity surface emitting lasers; Thermal variables measurement; thermal resistance; threshold current; vertical-cavity surface-emitting lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2160389
Filename :
5928388
Link To Document :
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