Consistent model for short-channel nMOSFET after hard gate oxide breakdown

Author

Kaczer, Ben ; Degraeve, Robin ; De Keersgieter, An ; Van De Mieroop, Koen ; Simons, Veerle ; Groeseneken, Guido

Author_Institution

IMEC, Leuven, Belgium

Volume

49

Issue

3

fYear

2002

fDate

3/1/2002 12:00:00 AM

Firstpage

507

Lastpage

513

Abstract

Dissimilar post-hard-breakdown nMOSFET characteristics are consistently explained by the location of a constant-size breakdown path. Device simulations with the breakdown path modeled as a narrow inclusion of highly doped n-type silicon well reproduce all postbreakdown nFET characteristics, including the substrate current behavior, for both gate-to-substrate and gate-to-extension breakdowns. An equivalent circuit describing the gate current in an nFET after hard gate-oxide breakdown is proposed

Keywords

MOSFET; SPICE; equivalent circuits; impact ionisation; semiconductor device breakdown; semiconductor device models; HSPICE; I-V characteristics; MEDICI calculations; TSUPREM4 process simulation; circuit simulation; constant-size breakdown path; dissimilar post-hard-breakdown characteristics; energy balance equations; equivalent circuit; gate-to-extension breakdowns; gate-to-substrate breakdowns; hard gate oxide breakdown; highly doped n-type well; narrow inclusion; physical model; short-channel nMOSFET; substrate current behavior; Circuit simulation; Dielectric breakdown; Dielectric substrates; Electric breakdown; Electrical resistance measurement; Equivalent circuits; FETs; Helium; MOSFET circuits; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.987123

Filename

987123