Title :
P/He ion implant isolation technology for AlGaN/GaN HFETs
Author :
Hanington, G. ; Hsin, Y.M. ; Liu, Q.Z. ; Asbeck, P.M. ; Lau, S.S. ; Khan, M.Asif ; Yang, J.W. ; Chen, Q.
Author_Institution :
California Univ., San Diego, La Jolla, CA, USA
fDate :
1/22/1998 12:00:00 AM
Abstract :
A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantations, the material sheet resistance is >108Ω/□, even at temperatures as high as 200°C. The high resistance is maintained for high temperature anneals >700°C. HFETs fabricated with this procedure exhibit good characteristics
Keywords :
III-V semiconductors; aluminium compounds; annealing; field effect transistors; gallium compounds; helium; ion implantation; isolation technology; phosphorus; semiconductor doping; 200 to 700 degC; AlGaN-GaN:P,He; HFETs; III-V semiconductors; co-implantation; high temperature anneals; ion implant isolation technology; material sheet resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980091
